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PD - 95817
AUTOMOTIVE MOSFET
Features
l l l l l
IRFL024Z
HEXFET(R) Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 150C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V RDS(on) = 57.5m
G S
ID = 5.1A
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
SOT-223
Absolute Maximum Ratings
ID @ TA = 25C ID @ TA = 70C IDM Continuous Drain Current, VGS @ 10V (Silicon Limited) i Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Parameter
Max.
5.1 4.1 41 2.8 1.0 0.02 20
Units
A
PD @TA = 25C Power Dissipation
PD @TA = 25C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS EAS (Tested ) IAR EAR TJ TSTG
i j
i
i h
W W/C V mJ A mJ
EAS (Thermally limited) Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
13 32 See Fig.12a, 12b, 15, 16 -55 to + 150
g
C
Thermal Resistance
RJA RJA
i Junction-to-Ambient (PCB mount, steady state) j
Junction-to-Ambient (PCB mount, steady state)
Parameter
Typ.
--- ---
Max.
45 120
Units
C/W
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IRFL024Z
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
55 --- --- 2.0 6.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.053 46.2 --- --- --- --- --- --- 9.1 1.9 3.9 7.8 21 30 23 340 68 39 210 55 93 --- --- 57.5 4.0 --- 20 250 200 -200 14 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC nA V V/C m V S A
Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 3.1A VDS = 25V, ID = 3.1A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 3.1A VDS = 44V VGS = 10V VDD = 28V ID = 3.1A RG = 53 VGS = 10V VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V
e
VDS = VGS, ID = 250A
e e
f
Source-Drain Ratings and Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 15 9.8 5.1 A 41 1.3 23 15 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 3.1A, VGS = 0V TJ = 25C, IF = 3.1A, VDD = 28V di/dt = 100A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 2.8mH RG = 25, IAS = 3.1A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population.
100% tested to this value in production.
When mounted on 1 inch square copper board. When mounted on FR-4 board using minimum
recommended footprint.
2
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IRFL024Z
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
BOTTOM
10
4.5V
1
4.5V 1 0.1 1 30s PULSE WIDTH Tj = 25C 10 100
0.1 0.1 1
30s PULSE WIDTH Tj = 150C 10 100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
12
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current ()
10 8 6 4 2
T J = 25C
T J = 150C 10
T J = 150C
TJ = 25C VDS = 25V 30s PULSE WIDTH 4 5 6 7 8 9 10
V DS = 10V 0 0 2 4 6 8 10 12 ID,Drain-to-Source Current (A)
1.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance vs. Drain Current
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IRFL024Z
10000 VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED Crss = C gd Coss = C ds + C gd
12.0 ID= 3.1A
VGS, Gate-to-Source Voltage (V)
10.0 8.0 6.0 4.0 2.0 0.0
VDS= 44V VDS= 28V VDS= 11V
C, Capacitance(pF)
1000
Ciss Coss Crss
100
10 1 10 100
0
2
4
6
8
10
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
TJ = 150C 10
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10 100sec 1 T A = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1msec 10msec
T J = 25C
1 0.2 0.4 0.6 0.8 1.0 1.2
VGS = 0V 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFL024Z
6 5
ID, Drain Current (A)
2.0
4 3 2 1 0 25 50 75 100 125 150 T A ,Ambient Temperature (C)
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 3.1A VGS = 10V
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 9. Maximum Drain Current vs. Ambient Temperature
Fig 10. Normalized On-Resistance vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05
1
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
1
2
Ri (C/W) i (sec) 5.0477 0.000463 19.9479 0.636160 20.0169 21.10000
0.1
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1 1 10 100
0.01 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRFL024Z
EAS , Single Pulse Avalanche Energy (mJ)
15V
60
50
VDS
L
DRIVER
ID 0.77A 0.89A BOTTOM 3.1A TOP
40
RG
20V VGS
D.U.T
IAS tp
+ V - DD
A
30
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
20
10
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy vs. Drain Current
10 V
QGS
QGD
VGS(th) Gate threshold Voltage (V)
4.0
VG
3.5
Charge
Fig 13a. Basic Gate Charge Waveform
3.0
ID = 250A
2.5
L
0
DUT 1K
VCC
2.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Temperature ( C )
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage vs. Temperature
6
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IRFL024Z
10
Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
Avalanche Current (A)
1
0.01 0.05 0.10
0.1
0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
14 12
EAR , Avalanche Energy (mJ)
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 3.1A
10 8 6 4 2 0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy vs. Temperature
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IRFL024Z
Driver Gate Drive
D.U.T
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
V DS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
8
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IRFL024Z
SOT-223 (TO-261AA) Package Outline
SOT-223 (TO-261AA) Part Marking Information
UCDTADTA6IADSAG #
DIU@SI6UDPI6G S@8UDAD@S GPBP
Q6SUAIVH7@S
GPUA8P9@ YYYY
)/
96U@A8P9@ XX A2A@6S XXA2AX@@F
UPQ
7PUUPH
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IRFL024Z
SOT-223 (TO-261AA) Tape & Reel Information
4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010)
TR
2.05 (.080) 1.95 (.077)
7.55 (.297) 7.45 (.294)
7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272)
16.30 (.641) 15.70 (.619)
2.30 (.090) 2.10 (.083)
NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4
330.00 (13.000) MAX.
50.00 (1.969) MIN.
NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
18.40 (.724) MAX. 14.40 (.566) 12.40 (.488)
4
3
Data and specifications subject to change without notice. This product has been designed for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/03
10
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